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savantic semiconductor product specification silicon npn power transistors 2SD1589 d escription with to-220fa package darlington complement to type 2sb1098 low speed switching applications low frequency power amplifier low speed switching industrial use pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 150 v v ceo collector-emitter voltage open base 100 v v ebo emitter-base voltage open collector 7 v i c collector current (dc) 5 a i cm collector current-peak 8 a i b base current (dc) 0.5 a t a =25 1.5 p c collector power dissipation t c =25 20 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-220fa) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SD1589 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector- emitter sustaining voltage i c =0.1a , i b =0 60 v v cesat collector-emitter saturation voltage i c =3a ;i b =3ma 1.5 v v besat base-emitter saturation voltage i c =3a; i b =3ma 2.0 v i cbo collector cut-off current v cb =100v ;i e =0 1 a h fe-1 dc current gain i c =3a ; v ce =2v 2000 15000 h fe-2 dc current gain i c =5a ; v ce =2v 500 switching times t on turn-on time 1.0 s t s storage time 3.5 s t f fall time i c =3a ;i b1 =3ma i b2 =-3ma; v cc b 50v r l =16.7 c 1.2 s h fe classifications r o y 2000-5000 3000-7000 5000-15000
savantic semiconductor product specification 3 silicon npn power transistors 2SD1589 package outline fig.2 outline dimensions (unindicated tolerance:0.15 mm)

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